Supplementary materials for the article “Study on the field-effect WSe2/Si heterojunction diode”

They also include figures of Fig. S1 (schematic device fabrication process), Fig. S2 (AFM images), Fig. S3 (scatting points of R and D* dependent on the light power density P), Fig. S4 (curves of Iph and RT dependent on the bias voltage Vds with Vg = 5 V, scatting points of Iph dependent on the light power density with Vg = 5 V, and scatting points of R and D* dependent on the light power density with Vg = 5 V), Fig. S5 (curves of Iph and RT dependent on the bias voltage Vds with Vg = -5 V, scatting points of Iph dependent on the light power density with Vg = -5 V and scatting points of R and D* dependent on the light power density with Vg = -5 V) and Fig. S6 (transfer characteristic curve of the Si sheet FET at Vds = 0.1 V).