Enhanced Thermal Stability of InAs Colloidal Quantum Dot Films with AlBr3 Ligands

Furthermore, their composition complies with the ‘Restriction of Hazardous Substances’ directive of the European Union, making them attractive for consumer electronics, including photodetectors and light-emitting diodes. However, achieving surface passivation comparable to that of well-studied Pb chalcogenides demonstrated to be challenging.

Currently, the device performance of InAs CQDs with InBr3-based ligands obtained via solution-phase ligand exchange is limited, indicating insufficient surface passivation. In this study, we introduce a novel AlBr3-based strategy for this type of ligand exchange of InAs CQDs with an excitonic peak centered at approximately 1200 nm. The resulting CQDs show enhanced photoluminescence intensity, attributed to the reduced steric hindrance of Al cations, indicating better surface passivation.