Text · dataset · 2025
Modeling SiO2 Ion Impurities Aging in Insulated Gate Power Devices Under Temperature and Voltage Stress
Listed in NASA Data Portal
This paper presents a formal computational methodology to explain how the oxide in semiconductors degrades over time and the dependence of oxide degradation on voltage and temperature stresses.
Description
The effects of aging are modeled and quantified by modification of the gate-source capacitance value. The model output is validated using experimental results of a thermally aged power semiconductor device.
Links
Get the data
- phmc_10_032.pdf c3.nasa.gov/dashlink/static/media/publication/phmc_10_032.pdf ↗
download · from data nasa gov
Where it is published
- NASA Data Portal dataset page data.nasa.gov/dataset/modeling-sio2-ion-impurities-aging-in-insulated-gate-p… ↗
landing page · from data nasa gov
Catalogue records · 1
- CKAN API data.nasa.gov/api/3/action/package_show?id=14818c80-14a1-4199-a955-e3c9a63f6… ↗
metadata API · from data nasa gov
Topics
- Inferred from text
- Materials engineering 73%
Provenance · 1 source records, 7 field assertions
| Source | Key | Last seen | Raw |
|---|---|---|---|
| NASA Data Portal | 14818c80-14a1-4199-a955-e3c9a63f63ee | 13 d ago | JSON v1 |
| Field | Assertion | Extractor | Evidence |
|---|---|---|---|
| concepts[field].anzsrc:group:4016 | enrichment · data nasa gov | taxonomy-embedding@1.1.0 | title+keywords+description (73%) |
| created_date | source · data nasa gov | connector:data_nasa_gov@1.0.0 | |
| description | source · data nasa gov | connector:data_nasa_gov@1.0.0 | /notes |
| license_text | source · data nasa gov | connector:data_nasa_gov@1.0.0 | |
| publication_date | source · data nasa gov | connector:data_nasa_gov@1.0.0 | |
| title | source · data nasa gov | connector:data_nasa_gov@1.0.0 | /title |
| updated_date | source · data nasa gov | connector:data_nasa_gov@1.0.0 |