Microstructural dynamics induced by nanoscale stress in ferroelectrics

A crucial aspect of harnessing the functionality of ferroelectrics for such devices involves locally controlling and understanding the microstructural dynamics such as ferroelectric switching behaviour and domain wall motion.

Intuitively, electric fields have been extensively used to probe and provide insight into these dynamics. Some studies have also investigated the role of mechanical stress on ferroelectrics, and with the advent of atomic force microscopy (AFM), it is now possible for large stresses to be applied from nanoscale AFM tips in a controlled, highly localised manner that is ideally suited to thin films. In this context, recent studies have shown that nanoscale stress can be used to cause ferroelectric switching in ultra-thin films through the flexoelectric effect.