Data and figures related to publication: "Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements"

The first line in each column describes the dataset. The complete figures are also included as .tif files. With the added context of the paper, it should be easy to reproduce the figures.

The data include original X-ray Diffraction, temperature and excitation dependent photoluminescence measurements as well as the analysed data presented in the figures of the paper. Figure 1: XRD pattern of a sample grown at 150 °C. Inset: SEM image of the same sample. Figure 2: Temperature dependent PL of a sample shortly after growth.

The excitation power for these measurements was set to 30 mW. Figure 3: (a) Temperature dependent PL of the zinc nitride sample after prolonged exposure to ambient. (b) Comparison of the high-energy bands of the same sample before (solid) and after (dashed) prolonged exposure to ambient.

Figure 4: PL spectra of bands A and B at (a) 3.7 and (b) 294 K at different excitation powers. (c) Peak intensities and (d) emission energies of band A at 294 K (●) and bands A (▼) and B (▲) at 3.7 K as a function of excitation power. The spectra in (a) have been normalised at the maximum intensity of band A. Figure 5: Temperature dependence of (a) relative integrated intensities (I/I0) and (b) the emission energies of band A at an excitation power of 100 mW (●) and bands A (▼) and B (▲) at an excitation power of 1 mW.