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Band structure near the Dirac point in HgTe quantum wells with critical thickness

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These are the data for the paper: A. Shuvaev, V. Dziom, J. Gospodarič, E. G. Novik, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, and A. Pimenov “Band structure near the Dirac point in HgTe quantum wells with critical thickness” Nanomaterials 12 , 2492 (2022). doi.org/10.3390/nano12142492 File format: "OriginPro" (OriginLab Corporation) For the free Viewer, see the link: originlab.com/viewer/ . All the necessary information is in the Q&A section.

The file "Cyclotron_Resonance_HgTe.oggu" provides the magneto-transmission of a circularly polarized light in HgTe quantum wells with critical thickness at T = 1.8K and n = 950 GHz. Sample #1 was measured as function of the gate voltage, sample #2 as function of the illumination time, with the charge density is varied via light illumination. Negative and positive magnetic fields correspond to negatively and positively charged quasiparticles, respectively.

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Acronyms: D.E.—Dirac electrons, D.H.—Dirac holes, M.H.— massive holes (see text for details). The file "Mass_Density.oggu" provides the parameters of the charge carriers as extracted from the Drude fits of the cyclotron resonance. The file "Band_Structure_HgTe.oggu" shows the band structure of HgTe films with critical thickness.

Symbols are experimental data from two samples, lines - kp-theory. The solid and dashed lines are split bands due to asymmetric potential and to bulk inversion asymmetry. The different slopes for electrons and holes are due to a lifted hole degeneracy.

The flattening of the hole dispersion at high values of k is due to approaching of the hole pockets around k ~ 0.5 1/nm, E ~15meV.

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Terahertz physics 76% · Text 75%
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