Data for figures in paper 'Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements'

Columns are separated by a space character. The first line in each column describes the dataset. With the added context of the paper, it should be easy to reproduce the figures.

The data include original X-ray Diffraction, temperature and excitation dependent photoluminescence measurements as well as the analysed data presented in the figures of the paper. Figure 1: XRD pattern of a sample grown at 150 °C. Inset: SEM image of the same sample. Figure 2: Temperature dependent PL of a sample shortly after growth.

The excitation power for these measurements was set to 30 mW. Figure 3: (a) Temperature dependent PL of the zinc nitride sample after prolonged exposure to ambient. (b) Comparison of the high-energy bands of the same sample before (solid) and after (dashed) prolonged exposure to ambient.

Figure 4: PL spectra of bands A and B at (a) 3.7 and (b) 294 K at different excitation powers. (c) Peak intensities and (d) emission energies of band A at 294 K (●) and bands A (▼) and B (▲) at 3.7 K as a function of excitation power. The spectra in (a) have been normalised at the maximum intensity of band A. Figure 5: Temperature dependence of (a) relative integrated intensities (I/I0) and (b) the emission energies of band A at an excitation power of 100 mW (●) and bands A (▼) and B (▲) at an excitation power of 1 mW.