Effects of input power, gas flow rate and hydrogen concentration on Cu film deposition by a radio frequency driven non-thermal atmospheric pressure plasma jet

The effffects of input power, hydrogen concentration (CH2) and gas flflow rate on the discharge parameters, and eventually on fifilm deposition rate and its properties are investigated. The results show that, besides the plasma gas temperature (Tg), the discharge current flflowing through the copper wire (Ifc) is also a key parameter for Cu fifilm deposition.

With increasing input power, both Tg and Ifc increase, which both facilitate the increase of fifilm deposition rate, surface roughness and particle size on the fifilm. Higher gas flflow rate leads to lower Tg, and results in the decrease of the deposition rate, surface roughness and particle size. The inflfluences of CH2 in plasma forming gas on Cu fifilm deposition have dual characters, due to the increase in the Tg and decease in the Ifc with CH2 increase.