Data for "Anion Effects in Electrochemical Transistors with Semiconducting Single-Walled Carbon Nanotube Networks"

Abbreviations used in the headers of the txt-files: Id: drain current Ig: gate (leakage) current gm: transconductance L: channel length W: channel width Vshift: transfer curve shift C’: capacitance of the channel con.: concentration Cond: device conditioning cycle Abstract of the related paper: Electrochemical transistors (ECTs) rely on the migration of cations or anions toward and into a semiconducting layer under an applied gate bias to counterbalance accumulated electrons or holes and thus control the current flow through the channel.

Dense networks of purely semiconducting single-walled carbon nanotubes (s-SWCNTs) are excellent semiconductors for ECTs, as they exhibit very high carrier mobilities, excellent chemical and mechanical stability, and are insoluble in solvents or electrolytes. They are applied here to study the effects of anion size and electrolyte solvent on hole injection and transport in ECTs. We employ electrolyte solutions with chloride and perchlorate, as well as anions based on triflate and fluorinated sulfonyl imides with increasing size and different kosmotropic and chaotropic properties.