Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

However, real 4H-SiC crystals often contain Shockley-type stacking faults (SSF), which can affect their radiation resistance. This study employs molecular dynamics method to explore the effects of SSF on radiation displacement cascades in 4H-SiC.

We conducted a comprehensive study of various SSF within the crystalline framework of 4H-SiC, and analyzed their stacking fault energy (SFE). We simulated the radiation displacement cascade in 4H-SiC with SSF and analyzed the effects of SSF on the distribution of radiation displacement defects. We simulated the radiation displacement cascade in 4H-SiC with SSF under different energies of primary knock-on atom (EPKA) and temperatures (T) conditions, and analyzed the variation pattern of the number of radiation displacement defects and clusters. The results indicate that SSF limits defect distribution position.