Study on Low-Dose-Rate Irradiation Damage Effects in Through-Silicon Via 3D Interconnect Structures

The experiments were carried out at the National Space Science Center, Chinese Academy of Sciences (using a ⁹⁰Sr β source with a dose rate of 0.1 rad(Si)/s), and at the Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (using a ⁶⁰Co γ source with a dose rate of 300 rad(Si)/s).

The total irradiation doses were set at 100, 300, and 500 krad(Si). A network analyzer and a semiconductor parameter analyzer were used to measure the S21 parameters and C–V curves, respectively. The experimental data under the same dose conditions were plotted and comparatively analyzed using Origin software.