Data for Auxetic piezoelectric effect in heterostructures

It is recently demonstrated that interface asymmetry can induce sizable piezoelectric effects in heterostructures even consisting of centrosymmetric semiconductors, which provide unprecedented flexibility to develop and optimize novel electromechanical coupling phenomena. 6 Here, by targeted engineering of the interface symmetry, we achieve unprecedented piezoelectric phenomena behaving as the electrical analogue of the negative Poisson’s ratio.

This, termed as the auxetic piezoelectric effect, exhibits the same sign of the longitudinal (d33) and transverse (d31, d32) piezoelectric coefficients, enabling a simultaneous contraction or expansion in all directions under the external electrical stimulus. The signs of the transverse coefficients can be further tuned via in-plane symmetry anisotropy. The effects exist in a wide range of material systems and exhibit significant coefficients, indicating potential implications in novel all-semiconductor actuator, sensor and filter applications.<br><br>Dataset to support a forthcoming paper in 'Nature Materials'.